DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen
Identifieur interne : 000D32 ( Main/Exploration ); précédent : 000D31; suivant : 000D33DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen
Auteurs : A. Bosacchi [Italie] ; S. Franchi [Italie] ; C. Ghezzi [Italie] ; E. Gombia [Italie] ; M. Guzzi [Italie] ; J. L. Staehli [Suisse] ; P. Allegri [Italie] ; V. Avanzini [Italie]Source :
- Journal of Crystal Growth [ 0022-0248 ] ; 1987.
Abstract
We report here electrical transport, deep level transient spectroscopy (DLTS) and low-temperature photoluminescence (PL) studies aimed at investigating the effect of hydrogen on deep and shallow levels in Sn doped GaAs, prepared by solid source MBE, in the presence of a 1 10-6 Torr hydrogen back-pressure. Electrical transport and PL data show that the use of hydrogen results in a significant decrease of the unintentional shallow donor and acceptor concentration. As a result, high electron mobility (84200 cm2/V·s at 77 K) and high PL quality GaAs could be prepared. The M1, M3, and M4 deep electron trap concentrations were found to decrease by one order of magnitude in layers grown at either 580 and 640°C, in the presence of hydrogen. The deep level concentration of samples grown at 640°C with hydrogen are in the low 1011 cm-3 range. The effect of hydrogen may be due either to the incorporation of shallow and deep levels at a reduced rate or to their passivation. Different tentative explanations are suggested, which, to some extent, can be supported by literature dealing with post-growth hydrogenation treatments of crystalline GaAs and of clean GaAs surfaces.
Url:
DOI: 10.1016/0022-0248(87)90389-7
Affiliations:
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen</title><author><name sortKey="Bosacchi, A" sort="Bosacchi, A" uniqKey="Bosacchi A" first="A." last="Bosacchi">A. Bosacchi</name></author><author><name sortKey="Franchi, S" sort="Franchi, S" uniqKey="Franchi S" first="S." last="Franchi">S. Franchi</name></author><author><name sortKey="Ghezzi, C" sort="Ghezzi, C" uniqKey="Ghezzi C" first="C." last="Ghezzi">C. Ghezzi</name></author><author><name sortKey="Gombia, E" sort="Gombia, E" uniqKey="Gombia E" first="E." last="Gombia">E. Gombia</name></author><author><name sortKey="Guzzi, M" sort="Guzzi, M" uniqKey="Guzzi M" first="M." last="Guzzi">M. Guzzi</name></author><author><name sortKey="Staehli, J L" sort="Staehli, J L" uniqKey="Staehli J" first="J. L." last="Staehli">J. L. Staehli</name></author><author><name sortKey="Allegri, P" sort="Allegri, P" uniqKey="Allegri P" first="P." last="Allegri">P. Allegri</name></author><author><name sortKey="Avanzini, V" sort="Avanzini, V" uniqKey="Avanzini V" first="V." last="Avanzini">V. Avanzini</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:CCD94D0A6B042B757ED1721237CBE2C5488BAB01</idno><date when="1987" year="1987">1987</date><idno type="doi">10.1016/0022-0248(87)90389-7</idno><idno type="url">https://api.istex.fr/document/CCD94D0A6B042B757ED1721237CBE2C5488BAB01/fulltext/pdf</idno><idno type="wicri:Area/Main/Corpus">000B08</idno><idno type="wicri:explorRef" wicri:stream="Main" wicri:step="Corpus" wicri:corpus="ISTEX">000B08</idno><idno type="wicri:Area/Main/Curation">000B08</idno><idno type="wicri:Area/Main/Exploration">000D32</idno><idno type="wicri:explorRef" wicri:stream="Main" wicri:step="Exploration">000D32</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen</title><author><name sortKey="Bosacchi, A" sort="Bosacchi, A" uniqKey="Bosacchi A" first="A." last="Bosacchi">A. Bosacchi</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>CNR - MASPEC Institute, Via Chiavari 18/A, I-43100 Parma</wicri:regionArea><wicri:noRegion>I-43100 Parma</wicri:noRegion></affiliation></author><author><name sortKey="Franchi, S" sort="Franchi, S" uniqKey="Franchi S" first="S." last="Franchi">S. Franchi</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>CNR - MASPEC Institute, Via Chiavari 18/A, I-43100 Parma</wicri:regionArea><wicri:noRegion>I-43100 Parma</wicri:noRegion></affiliation></author><author><name sortKey="Ghezzi, C" sort="Ghezzi, C" uniqKey="Ghezzi C" first="C." last="Ghezzi">C. Ghezzi</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>CNR - MASPEC Institute, Via Chiavari 18/A, I-43100 Parma</wicri:regionArea><wicri:noRegion>I-43100 Parma</wicri:noRegion></affiliation></author><author><name sortKey="Gombia, E" sort="Gombia, E" uniqKey="Gombia E" first="E." last="Gombia">E. Gombia</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>CNR - MASPEC Institute, Via Chiavari 18/A, I-43100 Parma</wicri:regionArea><wicri:noRegion>I-43100 Parma</wicri:noRegion></affiliation></author><author><name sortKey="Guzzi, M" sort="Guzzi, M" uniqKey="Guzzi M" first="M." last="Guzzi">M. Guzzi</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Physics Department, University of Milano, I-20100 Milano</wicri:regionArea><wicri:noRegion>I-20100 Milano</wicri:noRegion></affiliation></author><author><name sortKey="Staehli, J L" sort="Staehli, J L" uniqKey="Staehli J" first="J. L." last="Staehli">J. L. Staehli</name><affiliation wicri:level="1"><country xml:lang="fr">Suisse</country><wicri:regionArea>Institute for Applied Physics, EPF, Ch-1015 Lausanne</wicri:regionArea><wicri:noRegion>Ch-1015 Lausanne</wicri:noRegion></affiliation></author><author><name sortKey="Allegri, P" sort="Allegri, P" uniqKey="Allegri P" first="P." last="Allegri">P. Allegri</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>CNR - MASPEC Institute, Via Chiavari 18/A, I-43100 Parma</wicri:regionArea><wicri:noRegion>I-43100 Parma</wicri:noRegion></affiliation></author><author><name sortKey="Avanzini, V" sort="Avanzini, V" uniqKey="Avanzini V" first="V." last="Avanzini">V. Avanzini</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>CNR - MASPEC Institute, Via Chiavari 18/A, I-43100 Parma</wicri:regionArea><wicri:noRegion>I-43100 Parma</wicri:noRegion></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Crystal Growth</title><title level="j" type="abbrev">CRYS</title><idno type="ISSN">0022-0248</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1987">1987</date><biblScope unit="volume">81</biblScope><biblScope unit="issue">1–4</biblScope><biblScope unit="page" from="181">181</biblScope><biblScope unit="page" to="187">187</biblScope></imprint><idno type="ISSN">0022-0248</idno></series><idno type="istex">CCD94D0A6B042B757ED1721237CBE2C5488BAB01</idno><idno type="DOI">10.1016/0022-0248(87)90389-7</idno><idno type="PII">0022-0248(87)90389-7</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0022-0248</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report here electrical transport, deep level transient spectroscopy (DLTS) and low-temperature photoluminescence (PL) studies aimed at investigating the effect of hydrogen on deep and shallow levels in Sn doped GaAs, prepared by solid source MBE, in the presence of a 1 10-6 Torr hydrogen back-pressure. Electrical transport and PL data show that the use of hydrogen results in a significant decrease of the unintentional shallow donor and acceptor concentration. As a result, high electron mobility (84200 cm2/V·s at 77 K) and high PL quality GaAs could be prepared. The M1, M3, and M4 deep electron trap concentrations were found to decrease by one order of magnitude in layers grown at either 580 and 640°C, in the presence of hydrogen. The deep level concentration of samples grown at 640°C with hydrogen are in the low 1011 cm-3 range. The effect of hydrogen may be due either to the incorporation of shallow and deep levels at a reduced rate or to their passivation. Different tentative explanations are suggested, which, to some extent, can be supported by literature dealing with post-growth hydrogenation treatments of crystalline GaAs and of clean GaAs surfaces.</div></front></TEI><affiliations><list><country><li>Italie</li><li>Suisse</li></country></list><tree><country name="Italie"><noRegion><name sortKey="Bosacchi, A" sort="Bosacchi, A" uniqKey="Bosacchi A" first="A." last="Bosacchi">A. Bosacchi</name></noRegion><name sortKey="Allegri, P" sort="Allegri, P" uniqKey="Allegri P" first="P." last="Allegri">P. Allegri</name><name sortKey="Avanzini, V" sort="Avanzini, V" uniqKey="Avanzini V" first="V." last="Avanzini">V. Avanzini</name><name sortKey="Franchi, S" sort="Franchi, S" uniqKey="Franchi S" first="S." last="Franchi">S. Franchi</name><name sortKey="Ghezzi, C" sort="Ghezzi, C" uniqKey="Ghezzi C" first="C." last="Ghezzi">C. Ghezzi</name><name sortKey="Gombia, E" sort="Gombia, E" uniqKey="Gombia E" first="E." last="Gombia">E. Gombia</name><name sortKey="Guzzi, M" sort="Guzzi, M" uniqKey="Guzzi M" first="M." last="Guzzi">M. Guzzi</name></country><country name="Suisse"><noRegion><name sortKey="Staehli, J L" sort="Staehli, J L" uniqKey="Staehli J" first="J. L." last="Staehli">J. L. Staehli</name></noRegion></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/France/explor/AussoisV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000D32 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000D32 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/France
|area= AussoisV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:CCD94D0A6B042B757ED1721237CBE2C5488BAB01
|texte= DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen
}}
| This area was generated with Dilib version V0.6.29. |  |